IndiumV3, France, Analysis, bibRecord, 001559

Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

Identifieur interne : 001559 ( France/Analysis ); précédent : 001558; suivant : 001560

Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

Auteurs : RBID : Pascal:99-0282385

Descripteurs français

Pascal (Inist)
- 6116B, 6172N, 8105E, 8115H, Etude expérimentale, Défaut empilement, Aluminium composé, Gallium composé, Indium composé, Couche épitaxique, Semiconducteur bande interdite large, Céramique, Azote composé, Microscopie électronique.
Wicri :
- concept : Céramique.

English descriptors

KwdEn :
- Aluminium compounds, Ceramics, Electron microscopy, Epitaxial layers, Experimental study, Gallium compounds, Indium compounds, Nitrogen compounds, Stacking faults, Wide band gap semiconductors.

Abstract

The formation of the {1210} stacking fault, which has two atomic configurations in wurtzite (Ga,Al,In)N, has been investigated by high-resolution electron microscopy and energetic calculations. It originates from steps at the SiC surface and it can form on a flat (0001) sapphire surface. A modified Stillinger-Weber potential is used in order to investigate the relative stability of the two atomic configurations which have comparable energy in AIN, whereas the 121011{1210} atomic configuration should be more stable in GaN and InN. Experimental evidence is shown in the case of AIN and GaN from high-resolution electron microscopy. Observations carried out in plan-view show the 121011{1210} atomic configuration in GaN layers. The 162023 configuration was found in small areas inside the AIN buffer layer in cross-section observations. It folds rapidly to the basal plane, and when back in the prismatic plane it bears the 121011{1210} atomic configuration.

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Pascal:99-0282385

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides</title>
<author><name sortKey="Ruterana, P" uniqKey="Ruterana P">P. Ruterana</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Barbaray, B" uniqKey="Barbaray B">B. Barbaray</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bere, A" uniqKey="Bere A">A. Bere</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Vermaut, P" uniqKey="Vermaut P">P. Vermaut</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hairie, A" uniqKey="Hairie A">A. Hairie</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Paumier, E" uniqKey="Paumier E">E. Paumier</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Nouet, G" uniqKey="Nouet G">G. Nouet</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
<settlement type="city">Caen</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Salvador, A" uniqKey="Salvador A">A. Salvador</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond, Virginia 23284-3072</s1>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Botchkarev, A" uniqKey="Botchkarev A">A. Botchkarev</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond, Virginia 23284-3072</s1>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Morkoc, H" uniqKey="Morkoc H">H. Morkoc</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond, Virginia 23284-3072</s1>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">99-0282385</idno>
<date when="1999-06-15">1999-06-15</date>
<idno type="stanalyst">PASCAL 99-0282385 AIP</idno>
<idno type="RBID">Pascal:99-0282385</idno>
<idno type="wicri:Area/Main/Corpus">014F12</idno>
<idno type="wicri:Area/Main/Repository">013E97</idno>
<idno type="wicri:Area/France/Extraction">001559</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0163-1829</idno>
<title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title>
<title level="j" type="main">Physical review. B, Condensed matter</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Ceramics</term>
<term>Electron microscopy</term>
<term>Epitaxial layers</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>Indium compounds</term>
<term>Nitrogen compounds</term>
<term>Stacking faults</term>
<term>Wide band gap semiconductors</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6116B</term>
<term>6172N</term>
<term>8105E</term>
<term>8115H</term>
<term>Etude expérimentale</term>
<term>Défaut empilement</term>
<term>Aluminium composé</term>
<term>Gallium composé</term>
<term>Indium composé</term>
<term>Couche épitaxique</term>
<term>Semiconducteur bande interdite large</term>
<term>Céramique</term>
<term>Azote composé</term>
<term>Microscopie électronique</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Céramique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The formation of the {1210} stacking fault, which has two atomic configurations in wurtzite (Ga,Al,In)N, has been investigated by high-resolution electron microscopy and energetic calculations. It originates from steps at the SiC surface and it can form on a flat (0001) sapphire surface. A modified Stillinger-Weber potential is used in order to investigate the relative stability of the two atomic configurations which have comparable energy in AIN, whereas the 121011{1210} atomic configuration should be more stable in GaN and InN. Experimental evidence is shown in the case of AIN and GaN from high-resolution electron microscopy. Observations carried out in plan-view show the 121011{1210} atomic configuration in GaN layers. The 162023 configuration was found in small areas inside the AIN buffer layer in cross-section observations. It folds rapidly to the basal plane, and when back in the prismatic plane it bears the 121011{1210} atomic configuration.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0>
</fA01>
<fA02 i1="01"><s0>PRBMDO</s0>
</fA02>
<fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0>
</fA03>
<fA05><s2>59</s2>
</fA05>
<fA06><s2>24</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>RUTERANA (P.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BARBARAY (B.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BERE (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>VERMAUT (P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>HAIRIE (A.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>PAUMIER (E.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>NOUET (G.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>SALVADOR (A.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>BOTCHKAREV (A.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>MORKOC (H.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire dEtudes et de Recherches sur les Materiaux-Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond, Virginia 23284-3072</s1>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA20><s1>15917-15925</s1>
</fA20>
<fA21><s1>1999-06-15</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>144 B</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 1999 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>99-0282385</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The formation of the {1210} stacking fault, which has two atomic configurations in wurtzite (Ga,Al,In)N, has been investigated by high-resolution electron microscopy and energetic calculations. It originates from steps at the SiC surface and it can form on a flat (0001) sapphire surface. A modified Stillinger-Weber potential is used in order to investigate the relative stability of the two atomic configurations which have comparable energy in AIN, whereas the 121011{1210} atomic configuration should be more stable in GaN and InN. Experimental evidence is shown in the case of AIN and GaN from high-resolution electron microscopy. Observations carried out in plan-view show the 121011{1210} atomic configuration in GaN layers. The 162023 configuration was found in small areas inside the AIN buffer layer in cross-section observations. It folds rapidly to the basal plane, and when back in the prismatic plane it bears the 121011{1210} atomic configuration.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60A16B</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60A72N</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6116B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>6172N</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Défaut empilement</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Stacking faults</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Couche épitaxique</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Epitaxial layers</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Céramique</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ceramics</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Azote composé</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Nitrogen compounds</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Microscopie électronique</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Electron microscopy</s0>
</fC03>
<fN21><s1>172</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9923M000611</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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   |texte=   Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides
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Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

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